Theory of localized phonons on III-V(110) surfaces

被引:25
作者
Tutuncu, HM
Srivastava, GP
机构
[1] Department of Physics, Exeter University
关键词
III-V(110); surface phonons; mass trend; Rayleigh wave; Fuchs-Kliewer phonons; adiabatic bond-charge model;
D O I
10.1016/S0022-3697(97)00007-3
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We have calculated localized phonons on the (110) surfaces of GaAs, GaP, InAs and InP using the adiabatic bond-charge model, within a repeated slab scheme. Our results compare well with available high-resolution electron-energy-loss spectroscopy measurements and recent first principles theoretical results. Trends in frequencies and polarisation of surface phonon modes are examined. We find that the displacement patterns of the zone centre modes are similar for all the considered surfaces and that the difference in their energies can be explained in terms of the reduced mass difference. We also present a discussion on the trend in the location and dispersion of zone boundary Rayleigh wave as well as the highest surface optical frequency Fuchs-Kliewer phonon mode. (C) 1997 Elsevier Science Limited.
引用
收藏
页码:685 / 694
页数:10
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