Microporous silicon as a light trapping layer for photodiodes

被引：4

作者：

Zheng, JP ^{[1
]}

Charbel, PT

Kwok, HS

机构：

[1] Florida A&M Univ, Dept Elect & Comp Engn, Tallahassee, FL 32310 USA

[2] Florida State Univ, Tallahassee, FL 32310 USA

[3] Hong Kong Univ Sci & Technol, Dept Elect & Elect Engn, Clearwater Bay, Hong Kong, Peoples R China

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2000年 / 3卷 / 07期

关键词：

D O I：

10.1149/1.1391142

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Porous silicon films with micropore structures were grown on the surface of silicon wafers by an anodization process. The microporous silicon film was found to be an excellent light trapping layer. It was demonstrated that a quantum efficiency of higher than 90% could be obtained with incident angles of 40, 80, and 58 degrees, and for s-, p-, and randomly polarized light, respectively. (C) 2000 The Electrochemical Society. S1099-0062(00)03-069-8. All rights reserved.

引用

页码：338 / 339

页数：2

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