Noncontact measurement of thermal conductivity of liquid silicon in a static magnetic field

被引:60
作者
Kobatake, Hidekazu
Fukuyama, Hiroyuki
Minato, Izuru
Tsukada, Takao
Awaji, Satoshi
机构
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Osaka Prefecture Univ, Dept Chem Engn, Osaka 5998531, Japan
[3] Tohoku Univ, Mat Res Inst, Aoba Ku, Sendai, Miyagi 9808577, Japan
基金
日本学术振兴会;
关键词
D O I
10.1063/1.2710220
中图分类号
O59 [应用物理学];
学科分类号
摘要
Thermal conductivity of liquid silicon is indispensable for numerical modeling of silicon crystal growth processes and for elucidating electron transport phenomena in high-temperature liquids. However, crucial obstacles render measurement of thermal conductivity difficult: convection and contamination from contact materials. In this study, the authors developed a noncontact measurement of thermal conductivity of liquid silicon using electromagnetic levitation in a static magnetic field. Convection in the levitated silicon becomes negligible above 2 T. The determined thermal conductivity shows that the electron contribution is dominant for thermal transport in liquid silicon at temperatures of 1750-2050 K. (c) 2007 American Institute of Physics.
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页数:3
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