Novel microscopic mechanism of intermixing during growth on soft metallic substrates

被引:29
作者
Gómez, L [1 ]
Slutzky, C
Ferrón, J
de la Figuera, J
Camarero, J
de Parga, ALV
de Miguel, JJ
Miranda, R
机构
[1] Inst Fis Rosario, Fac Ciencias Exactas Ingn & Agrimensura, RA-2000 Rosario, Santa Fe, Argentina
[2] Univ Nacl Litoral, CONICET, FIQ, INTEC,Grp Fis, RA-3000 Santa Fe, Argentina
[3] Sandia Natl Labs, Livermore, CA 94551 USA
[4] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[5] Univ Autonoma Madrid, Inst Ciencia Mat Nicolas Cabrera, E-28049 Madrid, Spain
关键词
D O I
10.1103/PhysRevLett.84.4397
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Generic computer simulations using empiric interatomic potentials suggest a new, collective mechanism that could be responsible for mixing at heteroepitaxial interfaces. Even if single adsorbate atoms diffuse by hopping on the substrate surface and do not mix at the terraces, two-dimensional islands formed by nucleation may become unstable above a certain critical size and explode upwards forming clusters of several atomic layers. This process is accompanied by strong distortions of the underlying atomic layers, and on soft materials it can result in surface etching and incorporation of substrate atoms into the islands.
引用
收藏
页码:4397 / 4400
页数:4
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