Transient and static thermal behavior of high power single-mode semiconductor lasers

被引：16

作者：

Hu, MH ^{[1
]}

Liu, XS ^{[1
]}

Zah, CE ^{[1
]}

机构：

[1] Corning Inc, Sci & Technol, Corning, NY 14830 USA

来源：

APOC 2002: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS; MATERIALS AND DEVICES FOR OPTICAL AND WIRELESS COMMUNICATIONS | 2002年 / 4905卷

关键词：

semiconductor laser; temperature; thermal impedance; index contrast; kink; beam steering; local thermal effect; far field; laser packaging;

D O I：

10.1117/12.480966

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Transient and static thermal response of high power single-mode laser module has been simulated using finite element method (FEM). FEM modeling revealed the time constants of heat propagation in lateral direction and in vertical direction. The time constants calculated by FEM modeling in the microsecond scale and the sub-millisecond to millisecond scale were experimentally verified by a time-resolved far-field optical measurement and a transient forward-voltage measurement respectively. It is shown that the active region, semiconductor substrate and the solder-submount each contributes about 35%, 50% and 15% to the total static thermal resistance of the laser package.

引用

页码：32 / 36

页数：5