Reaction mechanism studies on the atomic layer deposition of ZrxTiyOz using the novel metal halide-metal alkoxide approach

被引：14

作者：

Rahtu, A ^{[1
]}

Ritala, M ^{[1
]}

机构：

[1] Univ Helsinki, Dept Chem, Inorgan Chem Lab, FIN-00014 Helsinki, Finland

来源：

LANGMUIR | 2002年 / 18卷 / 25期

关键词：

D O I：

10.1021/la026357t

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The reaction mechanism on the atomic layer deposition of ZrxTiyOz was studied by using a quartz crystal microbalance (QCM) and quadrupole mass spectrometry (QMS). QCM gave detailed information of the surface mass changes down to a submonolayer level while QMS probed the volatile reaction byproducts. Thus it was confirmed that the combination of these two techniques forms a powerful tool for studying the ALD reaction mechanisms.

引用

页码：10046 / 10048

页数：3

共 22 条

[1] PREPARATION OF MONOLITHIC METAL-OXIDE GELS BY A NON-HYDROLYTIC SOL-GEL PROCESS [J].

CORRIU, RJP ;

LECLERCQ, D ;

LEFEVRE, P ;

MUTIN, PH ;

VIOUX, A .

JOURNAL OF MATERIALS CHEMISTRY, 1992, 2 (06) :673-674

[2]

CORRIU RJP, 1996, ANGEW CHEM INT EDIT, V35, P1421

[3] High-resolution depth profiling in ultrathin Al2O3 films on Si [J].

Gusev, EP ;

Copel, M ;

Cartier, E ;

Baumvol, IJR ;

Krug, C ;

Gribelyuk, MA .

APPLIED PHYSICS LETTERS, 2000, 76 (02) :176-178

[4] Alternative dielectrics to silicon dioxide for memory and logic devices [J].

Kingon, AI ;

Maria, JP ;

Streiffer, SK .

NATURE, 2000, 406 (6799) :1032-1038

[5] Atomic layer deposition and chemical vapor deposition of tantalum oxide by successive and simultaneous pulsing of tantalum ethoxide and tantalum chloride [J].

Kukli, K ;

Ritala, M ;

Leskelä, M .

CHEMISTRY OF MATERIALS, 2000, 12 (07) :1914-1920

[6] Atomic layer deposition (ALD):: from precursors to thin film structures [J].

Leskelä, M ;

Ritala, M .

THIN SOLID FILMS, 2002, 409 (01) :138-146

[7] SOL-GEL CHEMISTRY [J].

LIVAGE, J ;

SANCHEZ, C .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 145 (1-3) :11-19

[8]

Matero R, 2001, CHEM MATER, V13, P4506, DOI [10.1021/cm011046+, 10.1021/cm011046]

[9] Synthesis of oxide thin films and overlayers by atomic layer epitaxy for advanced applications [J].

Niinisto, L ;

Ritala, M ;

Leskela, M .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 41 (01) :23-29

[10] Compensation of temperature effects in quartz crystal microbalance measurements [J].

Rahtu, A ;

Ritala, M .

APPLIED PHYSICS LETTERS, 2002, 80 (03) :521-523

← 1 2 3 →