Phase transitions on Si(113): A high-temperature scanning-tunneling-microscopy study

被引:23
作者
Hibino, H
Ogino, T
机构
[1] NTT Basic Research Laboratories
来源
PHYSICAL REVIEW B | 1997年 / 56卷 / 07期
关键词
D O I
10.1103/PhysRevB.56.4092
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Reconstructive phase transitions on Si(113) have been investigated near the critical temperatures using high-temperature scanning tunneling microscopy. During the phase transition between (3x1) and (3x2) reconstructions. (3x2) domains nucleate and fluctuate within the (3x1) domain, and their size increases as the temperature decreases. During the disordering of the (3x1) reconstruction, highly mobile domain walls are observed, which increase in density as the transition is approached from below. The structure and evolution of the domain walls is consistent with disordering of the (3x1) reconstruction via incorporation of [-] (heavy) domain walls.
引用
收藏
页码:4092 / 4097
页数:6
相关论文
共 13 条
[1]   CRITICAL-BEHAVIOR AT CHIRAL MELTING - DISORDERING OF THE SI(113)-(3X1) RECONSTRUCTION [J].
ABERNATHY, DL ;
BIRGENEAU, RJ ;
BLUM, KI ;
MOCHRIE, SGJ .
PHYSICAL REVIEW LETTERS, 1993, 71 (05) :750-753
[2]   CHIRAL MELTING OF THE SI(113)(3X1) RECONSTRUCTION [J].
ABERNATHY, DL ;
SONG, S ;
BLUM, KI ;
BIRGENEAU, RJ ;
MOCHRIE, SGJ .
PHYSICAL REVIEW B, 1994, 49 (04) :2691-2705
[3]   ATOMIC-STRUCTURE OF CLEAN SI(113) SURFACES - THEORY AND EXPERIMENT [J].
DABROWSKI, J ;
MUSSIG, HJ ;
WOLFF, G .
PHYSICAL REVIEW LETTERS, 1994, 73 (12) :1660-1663
[4]   DOMAIN-WALLS AND THE MELTING OF COMMENSURATE SURFACE PHASES [J].
HUSE, DA ;
FISHER, ME .
PHYSICAL REVIEW LETTERS, 1982, 49 (11) :793-796
[5]   COMMENSURATE MELTING, DOMAIN-WALLS, AND DISLOCATIONS [J].
HUSE, DA ;
FISHER, ME .
PHYSICAL REVIEW B, 1984, 29 (01) :239-270
[6]   CHEMISORPTION OF H, H2O AND C2H4 ON SI(113) - IMPLICATIONS FOR THE STRUCTURE [J].
JACOBI, K ;
MYLER, U .
SURFACE SCIENCE, 1993, 284 (03) :223-235
[7]   STRUCTURE OF SI(113) DETERMINED BY SCANNING TUNNELING MICROSCOPY [J].
KNALL, J ;
PETHICA, JB ;
TODD, JD ;
WILSON, JH .
PHYSICAL REVIEW LETTERS, 1991, 66 (13) :1733-1736
[8]   LEED STUDIES OF CLEAN HIGH MILLER INDEX SURFACES OF SILICON [J].
OLSHANETSKY, BZ ;
MASHANOV, VI .
SURFACE SCIENCE, 1981, 111 (03) :414-428
[9]   ATOMIC-STRUCTURE OF SI AND GE SURFACES - MODELS FOR (113), (115), AND STEPPED (001) VICINAL SURFACES [J].
RANKE, W .
PHYSICAL REVIEW B, 1990, 41 (08) :5243-5250
[10]   Reconstructions on the Si(113) surface [J].
Sakama, H ;
Kunimatsu, D ;
Kageshima, M ;
Kawazu, A .
PHYSICAL REVIEW B, 1996, 53 (11) :6927-6930