Laser performance and spectroscopic analysis of optically written channel waveguides in neodymium-doped gallium lanthanum sulphide glass

被引:34
作者
Mairaj, AK [1 ]
Chardon, AM [1 ]
Shepherd, DP [1 ]
Hewak, DW [1 ]
机构
[1] Univ Southampton, Optoelect Res Ctr, Southampton SO17 1BJ, Hants, England
基金
英国工程与自然科学研究理事会;
关键词
amorphous semiconductor; optical writing; waveguide laser;
D O I
10.1109/JSTQE.2002.806672
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We present a spectroscopic analysis and laser characterization of optically written waveguides in neodymium-doped gallium lanthanum sulphide (Nd3+-Ga:La:S) chalcogenide glass. Uniform channel waveguides were fabricated in Nd3+-Ga:La-S by exposure to radiation from a focused UV-laser beam (gimel = 244 nm), producing a refractive index change Deltan approximate to +10(-3). The observed laser performance and fluorescence decay were in good agreement with values calculated from a spectroscopic analysis of 85 mus for the F-4(3/2) lifetime and 5.9 x 10(-20) cm(2) for the emission cross section at 1075 nm. Low threshold laser operation with emission at 1075 nm and a slope efficiency of 17% is demonstrated. The active device is spatially single mode and exhibits up to 8.6 mW of output power and propagation losses of < 0.5 dB cm(-1). Waveguide fabrication, photoinduced effects, and optical characterization in terms of spectroscopy, laser performance, and device attenuation are discussed.
引用
收藏
页码:1381 / 1388
页数:8
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