Development of translucent aluminum nitride (AIN) using microwave sintering process

被引：24

作者：

Cheng, JP ^{[1
]}

Agrawal, D ^{[1
]}

Zhang, YJ ^{[1
]}

Roy, R ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

JOURNAL OF ELECTROCERAMICS | 2002年 / 9卷 / 01期

关键词：

aluminum nitride; microwave sintering; translucent ceramics;

D O I：

10.1023/A:1021646219797

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Pure aluminum nitride (AIN) has been successfully sintered to highly translucent form by microwave sintering at 1850degreesC with a dwelling time of 30-60 minutes. The results showed that the sintering temperature should be at least 1850degreesC or higher to get reasonable translucency in the AIN sample by the microwave sintering process. On the other hand, the conventional sintering method requires much longer sintering time to obtain a translucent AIN ceramics.

引用

页码：67 / 71

页数：5

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