A scheme for electrical detection of single-electron spin resonance

被引：45

作者：

Martin, I ^{[1
]}

Mozyrsky, D

Jiang, HW

机构：

[1] Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

[2] Univ Calif Los Angeles, Dept Phys & Astron, Los Angeles, CA 90095 USA

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 01期

关键词：

D O I：

10.1103/PhysRevLett.90.018301

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We study a scheme for electrical detection of the spin resonance of a single-electron trapped near a field effect transistor (FET) conduction channel. In this scheme, the resonant Rabi oscillations of the trapped electron spin cause a modification of the average charge of a shallow trap, which can be detected through the change in the FET channel resistivity. We show that the dependence of the channel resistivity on the frequency of the rf field can have either peak or dip at the Larmor frequency of the electron spin in the trap.

引用

页数：4

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