Humidity sensors based on pentacene thin-film transistors

被引：336

作者：

Zhu, ZT ^{[1
]}

Mason, JT ^{[1
]}

Dieckmann, R ^{[1
]}

Malliaras, GG ^{[1
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 24期

关键词：

D O I：

10.1063/1.1527233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

When a pentacene thin-film transistor is exposed to humidity, its saturation current decreases. This decrease was found to be reversible and can therefore be used to measure the amount of relative humidity in atmosphere. The sensitivity was found to depend on the thickness of the pentacene layer. The microscopic origin of the sensing mechanism is discussed. (C) 2002 American Institute of Physics.

引用

页码：4643 / 4645

页数：3

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