Organic polymeric thin-film transistors fabricated by selective dewetting

被引：69

作者：

Chabinyc, ML ^{[1
]}

Wong, WS ^{[1
]}

Salleo, A ^{[1
]}

Paul, KE ^{[1
]}

Street, RA ^{[1
]}

机构：

[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 22期

关键词：

D O I：

10.1063/1.1524301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Thin-film transistors (TFTs) of polymeric semiconductors were fabricated using selective dewetting in the patterning process. The process consists of: (i) patterning the wettability of the substrate using a protective layer of printed wax and a self-assembled monolayer, and (ii) patterning a polymeric semiconductor by selective dewetting from an organic solution. The method has been used to fabricate small arrays of TFTs with a regioregular poly(thiophene) and poly(9-9(')-dioctyl-fluorene-co-bithiophene). The TFTs exhibited mobilities of 0.5-1.0x10(-3) cm(2) V-1 s(-1) and on-to-off ratios on the order of 10(4). (C) 2002 American Institute of Physics.

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页码：4260 / 4262

页数：3

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