Low-energy electron-beam patterning of amine-functionalized self-assembled monolayers

被引:97
作者
Harnett, CK [1 ]
Satyalakshmi, KM [1 ]
Craighead, HG [1 ]
机构
[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
关键词
D O I
10.1063/1.126378
中图分类号
O59 [应用物理学];
学科分类号
摘要
Patterned amine-functionalized self-assembled monolayers have potential as a template for the deposition and patterning of a wide variety of materials on silicon surfaces, including biomolecules. Results are presented here for low-energy electron-beam patterning of 2-aminopropyltriethoxysilane and (aminoethylaminomethyl)phenethyltrimethoxysilane self-assembled monolayers on silicon substrates. On these ultrathin (1-2 nm) monolayers, lower electron beam energies (< 5 keV) produce higher resolution patterns than high-energy beams. Auger electron spectroscopy indicates that low-energy electron exposure primarily damages the amine groups. At 1 keV, a dose of 40 mu C/cm(2) is required to make the patterns observable by lateral force microscopy. Features as small as 80 nm were exposed at 2 keV on these monolayers. After exposure, palladium colloids and aldehyde- and protein-coated polystyrene fluorescent spheres adhered only to unexposed areas of the monolayers. (C) 2000 American Institute of Physics. [S0003-6951(00)02517-1].
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收藏
页码:2466 / 2468
页数:3
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