Energy level alignment regimes at hybrid organic-organic and inorganic-organic interfaces

被引:115
作者
Braun, Slawomir [1 ]
Osikowicz, Wojciech
Wang, Ying
Salaneck, William R.
机构
[1] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden
[2] EI DuPont Nemours & Co Inc, Expt Stn, Wilmington, DE 19880 USA
关键词
energy level alignment; OLED; hole-transporting materials; interfaces; photoelectron spectroscopy; hole-injection barrier;
D O I
10.1016/j.orgel.2006.10.006
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ultraviolet photoelectron spectroscopy has been used to determine the energy level alignment at interfaces of molecular hole-transporting materials and various conductive substrates. Depending on the work function of the substrate, phi(s), a transition between two different energy level alignment regimes has been observed: namely vacuum level alignment and Fermi level pinning. The transition is associated with spontaneous positive charge transfer across the interface to the organic semiconductors above a certain material-specific threshold value of phi(s). The charge transfer results in formation of an interfacial dipole of a magnitude that scales with phi(s). In the vacuum level alignment regime, the hole-injection barriers scale linearly with phi(s), while in the Fermi level pinning regime, these barriers are constant and independent of phi(s). (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:14 / 20
页数:7
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