Catalyst-free synthesis of ZnO nanowire arrays on zinc substrate by low temperature thermal oxidation

被引：90

作者：

Ren, S. ^{[1
]}

Bai, Y. F.

Chen, Jun

Deng, S. Z.

Xu, N. S.

Wu, Q. B.

Yang, Shihe

机构：

[1] Sun Yat Sen Univ, Sch Phys & Engn,Ctr Nanotechnol Res, Guangdong Prov Key Lab Display Mat & Technol, State Key Lab Optoelect Mat & Technol, Guangzhou 510275, Peoples R China

[2] Hong Kong Univ Sci & Technol, Inst Nano Sci & Technol, Dept Chem, Kowloon, Hong Kong, Peoples R China

来源：

MATERIALS LETTERS | 2007年 / 61卷 / 03期

基金：

中国国家自然科学基金;

关键词：

zinc oxide; nanowire; photoluminescence;

D O I：

10.1016/j.matlet.2006.05.031

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High density ZnO nanowire arrays were successfully synthesized without catalyst by direct oxidation of zinc substrate in air below 400 degrees C, lower than the melting point of zinc metal. The as-grown ZnO nanowires are single crystalline with a Wurzite structure extending in < 110 > direction. The diameters of the ZnO nanowires range from 20 to 150 nm and the lengths from several to over ten micrometers. Room temperature photoluminescence measurements reveal an intense ultraviolet emission at 397 nm. The present work highlights the promise of the low temperature, direct oxidation process in the high-yield synthesis of high quality semiconductor nanowire arrays for nano-devices. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：666 / 670

页数：5

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