Voltage dependence of the magnetic state in magnetic tunnel junctions

被引:12
作者
Heide, C
Krikunov, AI
Ogrin, YF
Zilberman, PE
Elliott, RJ
机构
[1] Russian Acad Sci, Inst Radio Engn & Elect, Moscow 141120, Russia
[2] Univ Oxford, Dept Phys, Oxford OX1 3NP, England
关键词
D O I
10.1063/1.373301
中图分类号
O59 [应用物理学];
学科分类号
摘要
In magnetic tunnel junctions (MTJ) we study how the magnetic state depends on the tunnel current. We present data on the I-V dependence of the MTJ in strong biasing fields up to 4 V, and propose that the observed hysteresis may have its origin in spin-polarized electrons influencing locally the magnetic state of the system. (C) 2000 American Institute of Physics. [S0021-8979(00)32608-1].
引用
收藏
页码:5221 / 5223
页数:3
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