Fabrication and field emission study of gated diamondlike-carbon-coated silicon tips

被引：13

作者：

Lee, S ^{[1
]}

Ju, BK ^{[1
]}

Lee, YH ^{[1
]}

Jeon, D ^{[1
]}

Oh, MH ^{[1
]}

机构：

[1] KOREA INST SCI & TECHNOL, DIV ELECT & INFORMAT TECHNOL, SEOUL 130650, SOUTH KOREA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1997年 / 15卷 / 02期

关键词：

D O I：

10.1116/1.589330

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated a gated silicon held emitter array for which the silicon tips are coated with a diamondlike-carbon him (DLC). Silicon oxide disks were patterned on the silicon substrate, and the tips were formed using conventional dry etching. With the oxide caps covering the tips, the insulating layer, molybdenum gate film, and aluminum parting layer were deposited. At this stage the oxide caps were removed to expose the silicon tips and a DLC-carbon film was deposited onto the tips. (C) 1997 American Vacuum Society.

引用

页码：425 / 427

页数：3

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