A low power fully integrated bandpass operational amplifier for biomedical neural recording applications

被引：13

作者：

Mohseni, P ^{[1
]}

Najafi, K ^{[1
]}

机构：

[1] Univ Michigan, Ctr Wireless Integrated MicroSyst WIMS, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

SECOND JOINT EMBS-BMES CONFERENCE 2002, VOLS 1-3, CONFERENCE PROCEEDINGS: BIOENGINEERING - INTEGRATIVE METHODOLOGIES, NEW TECHNOLOGIES | 2002年

关键词：

low power; fully integrated; bandpass amplifier; sub-threshold operation; neural recording;

D O I：

10.1109/IEMBS.2002.1053193

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

This paper presents a low power fully integrated bandpass amplifier for a variety of biomedical neural recording applications. A standard two-stage CMOS amplifier in a closed-loop resistive feedback configuration provides stable AC gain of 39.5 dB at 1 kHz. A PMOS input transistor, biased near the sub-threshold region acting as a high value resistor in the range of hundreds of mega ohms, is utilized to clamp the large and random DC open circuit potential that normally exists at the electrode-electrolyte interface. The 3 dB bandwidth of the amplifier is measured to be 26 Hz - 6.5 kHz and the tolerable DC input range is measured to be at least 1 V. The amplifier measures 0.107 mm(2) in die area and dissipates 133 muW from a 3 V power supply. It is fabricated in MOSIS AMI 1.5 mum double poly double metal n-well CMOS process. Bench tests show complete functionality of the amplifier in both light and dark conditions and for a wide range of recording electrode capacitance.

引用

页码：2111 / 2112

页数：2

共 4 条

[1]

Chandran A.P., 1999, BMES/EMBS Conference, V1, P386

[2]

DAGTEKIN M, 2001, P 23 ANN IEEE EMBS C

[3] AN IMPLANTABLE CMOS CIRCUIT INTERFACE FOR MULTIPLEXED MICROELECTRODE RECORDING ARRAYS [J].