Si layer transfer to InP substrate using low-temperature wafer bonding

被引：8

作者：

Arokiaraj, J. ^{[1
]}

Tripathy, S. ^{[1
]}

Vicknesh, S. ^{[1
]}

Chua, S. J. ^{[1
]}

机构：

[1] Inst Mat Res & Engn, Singapore 117602, Singapore

来源：

APPLIED SURFACE SCIENCE | 2006年 / 253卷 / 03期

关键词：

wafer bonding; SOI; InP; oxygen plasma; micro-Raman; thin-film;

D O I：

10.1016/j.apsusc.2006.01.071

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 [物理化学]; 081704 [应用化学];

摘要：

Using a low-temperature wafer bonding process, InP substrates are bonded to silicon-on-insulator (SOI) substrates at 220 degrees C. A combination of oxygen plasma and chemical treatment results in a direct contact bonding at room temperature. After the bonding process at 220 degrees C for 45 min, removal of the Si handle substrate by sacrificial etching of the buried oxide layer in SOI, results in a thin membrane of Si robustly bonded to InP. The thin Si membrane bonded to InP shows uniformly bonded interface under high-resolution electron microscopy. Micro-Raman analysis has also been carried out to study the bonded interface. I-V characteristics of the bonded structures suggest that such bonding and layer transfer processes are suitable for device integration. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：1243 / 1246

页数：4

共 10 条

[1]

Probing interface structure of low-temperature-bonded InP on Si [J].