A super low-k (k=1.1) silica aerogel film using supercritical drying technique

被引：4

作者：

Kawakami, N ^{[1
]}

Fukumoto, Y ^{[1
]}

Kinoshita, T ^{[1
]}

Suzuki, K ^{[1
]}

Inoue, K ^{[1
]}

机构：

[1] Kobe Steel Ltd, Elect Res Lab, Nishi Ku, Kobe, Hyogo 6512271, Japan

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854306

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A porous silica aerogel film as low-k dielectrics is demonstrated for the first time. An "on-wafer" gelation technique in ammonium hydroxide vapor is developed to enhance the process compatibility with the conventional spin-on dielectric process in ULSI technology. By using a supercritical drying process, which is free from capillary forces, a high porosity aerogel film with a k value of 1.1 is obtained.

引用

页码：143 / 145

页数：3