Nature of the passive film on nickel

被引:325
作者
Sikora, E [1 ]
Macdonald, DD [1 ]
机构
[1] Penn State Univ, Ctr Electrochem Sci & Technol, Dept Mat Sci & Engn, University Pk, PA 16802 USA
关键词
nickel; passivity; transpassive state;
D O I
10.1016/S0013-4686(02)00552-2
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
The passive film formed anodically on nickel in borate buffer solution in both the passive and transpassive regions is found to be p-type in electronic character, corresponding to a preponderance of metal vacancies (over oxygen vacancies and nickel interstitials) in the barrier layer. However, at high anodic potentials, some n-type character was detected by Mott-Schottky analysis, which is probably due to the presence of free charge carriers (electrons) from the evolution of oxygen and/or the oxidative ejection of Ni3+ at the barrier layer/outer layer interface. The p-type character of the film is consistent with the diagnostic criteria obtained from the Point Defect Model for a passive film, in which the majority defect in the NiO barrier layer is the metal vacancy. The transpassive state is postulated to comprise a thick, porous oxide film on the surface, with the current probably being due to the oxidative ejection of Ni3+ species from the barrier layer and oxygen evolution within the pores, or both. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:69 / 77
页数:9
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