Statistical design of low power square-law CMOS cells for high yield

被引:6
作者
Tarim, TB
Kuntman, HH
Ismail, M
机构
[1] Ohio State Univ, Dept Elect Engn, Analog VLSI Lab, Columbus, OH 43210 USA
[2] Istanbul Tech Univ, Dept Elect Engn, TR-80626 Istanbul, Turkey
关键词
Analog integrated circuit - Square law CMOS cell - Voltage circuit;
D O I
10.1023/A:1008319604774
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 [计算机科学与技术];
摘要
A robust design of low voltage low power square law CMOS composite cells using statistical VLSI design techniques is presented. Since random device/process variations do not scale down with feature size or supply voltage, the statistical design of low voltage circuits is essential in order to keep functional yields of low voltage circuits at levels that are competitive and cost effective. The Response Surface Methodology and Design of Experiment techniques were used as statistical techniques. This article shows that statistical techniques will result in area/layout optimization which will enhance functional yield of low voltage analog ICs.
引用
收藏
页码:237 / 248
页数:12
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