Transformation of spin information into large electrical signals using carbon nanotubes

被引:281
作者
Hueso, Luis E.
Pruneda, Jose M.
Ferrari, Valeria
Burnell, Gavin
Valdes-Herrera, Jose P.
Simons, Benjamin D.
Littlewood, Peter B.
Artacho, Emilio
Fert, Albert
Mathur, Neil D.
机构
[1] Univ Cambridge, Dept Mat Sci, Cambridge CB2 3QZ, England
[2] Univ Cambridge, Dept Earth Sci, Cambridge CB2 3EQ, England
[3] CSIC, Inst Ciencia Mat Barcelona, E-08193 Barcelona, Spain
[4] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England
[5] Univ Cambridge, Nanosci Ctr, Cambridge CB3 0FF, England
[6] CNRS Thales TRT, Unite Mixte Phys, F-91405 Orsay, France
基金
英国工程与自然科学研究理事会;
关键词
D O I
10.1038/nature05507
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Spin electronics (spintronics) exploits the magnetic nature of electrons, and this principle is commercially applied in, for example, the spin valves of disk-drive read heads. There is currently widespread interest in developing new types of spintronic devices based on industrially relevant semiconductors, in which a spin-polarized current flows through a lateral channel between a spin-polarized source and drain(1,2). However, the transformation of spin information into large electrical signals is limited by spin relaxation, so that the magnetoresistive signals are below 1% ( ref. 2). Here we report large magnetoresistance effects (61% at 5 K), which correspond to large output signals ( 65 mV), in devices where the non-magnetic channel is a multiwall carbon nanotube that spans a 1.5 mu m gap between epitaxial electrodes of the highly spin polarized(3,4) manganite La0.7Sr0.3MnO3. This spintronic system combines a number of favourable properties that enable this performance; the long spin lifetime in nanotubes due to the small spin - orbit coupling of carbon; the high Fermi velocity in nanotubes that limits the carrier dwell time; the high spin polarization in the manganite electrodes, which remains high right up to the manganite - nanotube interface; and the resistance of the interfacial barrier for spin injection. We support these conclusions regarding the interface using density functional theory calculations. The success of our experiments with such chemically and geometrically different materials should inspire new avenues in materials selection for future spintronics applications.
引用
收藏
页码:410 / 413
页数:4
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