1200nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions

被引：77

作者：

Coldren, CW

Larson, MC

Spruytte, SG

Harris, JS

机构：

[1] Stanford Univ, Solid State & Photon Lab, Stanford, CA 94305 USA

[2] Univ Calif Lawrence Livermore Natl Lab, Livermore, CA 94551 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 11期

关键词：

D O I：

10.1049/el:20000365

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Elemental source molecular beam epitaxy has been used to grow vertical cavity laser diodes on GaAs substrates that employ GaInNAs multiquantum well active regions and AlAs/GaAs distributed Bragg reflectors. The laser diodes emitted light at 1200nm and had threshold current densities of 2.5kA/cm(2) and efficiencies of 0.066W/A under room temperature pulsed operation.

引用

页码：951 / 952

页数：2

共 3 条

[1] GaInNAs-GaAs long-wavelength vertical-cavity surface-emitting laser diodes [J].