Kinetic Monte Carlo method for dislocation glide in silicon

被引：18

作者：

Cai, W ^{[1
]}

Bulatov, VV

Yip, S

机构：

[1] MIT, Dept Nucl Engn, Cambridge, MA 02139 USA

[2] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA

来源：

JOURNAL OF COMPUTER-AIDED MATERIALS DESIGN | 1999年 / 6卷 / 2-3期

关键词：

double-kink; kinetic Monte Carlo; partial dislocation; Si;

D O I：

10.1023/A:1008730124719

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A kinetic Monte Carlo (KMC) approach to the mesoscale simulation of dislocation glide via the kink mechanism is developed. In this paper we present the details of the KMC methodology, highlighting three features: (1) inclusion of dislocation dissociation; (2) efficient method of sampling the double-kink nucleation process; and (3) exact calculation of dislocation segment interactions.

引用

页码：175 / 183

页数：9

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