Spin relaxation in semiconductor quantum dots

被引:499
作者
Khaetskii, AV
Nazarov, YV
机构
[1] Delft Univ Technol, Fac Sci Appl, NL-2628 CJ Delft, Netherlands
[2] Delft Univ Technol, DIMES, NL-2628 CJ Delft, Netherlands
[3] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Moscow District, Russia
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 19期
关键词
D O I
10.1103/PhysRevB.61.12639
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have studied spin-flip processes in GaAs electron quantum dots that accompany transitions between different discrete energy levels. Several different mechanisms that originate from spin-orbit coupling are shown to be responsible for such processes. We have evaluated the rates for all mechanisms with and without. a magnetic field. We have shown that the spin relaxation of the electrons localized in the dots differs strikingly from that of the delocalized electrons. The most effective spin-flip mechanisms related to the absence of the inversion symmetry appear to be strongly suppressed for localized electrons. This results in unusually low spin-hip rates.
引用
收藏
页码:12639 / 12642
页数:4
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