Wet and dry etching techniques for the release of sub-micrometre perforated membranes

被引：24

作者：

Kuiper, S ^{[1
]}

de Boer, M ^{[1
]}

van Rijn, C ^{[1
]}

Nijdam, W ^{[1
]}

Krijnen, G ^{[1
]}

Elwenspoek, M ^{[1
]}

机构：

[1] MESA Res Inst, Micro Mech Transducers Grp, NL-7500 AE Enschede, Netherlands

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2000年 / 10卷 / 02期

关键词：

Anisotropy - Hydrogen - Membranes - Perforating - Photolithography - Plasma applications - Potassium compounds - Pressure effects - Reactive ion etching - Semiconducting silicon compounds - Silicon wafers;

D O I：

10.1088/0960-1317/10/2/312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the production of microsieves we studied the release of perforated silicon nitride membranes from a silicon substrate. During the release by KOH etching the pressure build-up due to hydrogen gas formation can be quite large and cause rupture of the membrane. We explored the use of anisotropic etching with an SF6/O-2 plasma to replace KOH etching. For sub-micrometre pores excellent results were obtained.

引用

页码：171 / 174

页数：4

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