Physical properties of AlGaAs epilayers subjected to high pressure high temperature treatment

被引：1

作者：

Szuszkiewicz, W

Gebicki, W

BakMisiuk, J

Domagala, J

Leszczynski, M

Hartwig, J

机构：

[1] TECH UNIV WARSAW,PL-00662 WARSAW,POLAND

[2] POLISH ACAD SCI,HIGH PRESSURE RES CTR,WARSAW,POLAND

[3] EUROPEAN SYNCHROTRON RADIAT FACIL,F-38043 GRENOBLE,FRANCE

来源：

ACTA PHYSICA POLONICA A | 1997年 / 91卷 / 05期

关键词：

D O I：

10.12693/APhysPolA.91.1003

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

AlGaAs layers grown by molecular beam epitaxy on GaAs substrates were investigated before and after high hydrostatic pressure (1.2 GPa) at high temperature (770 K) treatment. In order to study the influence of high pressure - high temperature treatment on the physical properties of the AlGaAs layers, X-ray, electron transport and Raman scattering measurements were performed at room temperature. The observed changes in the lattice parameter, Raman spectra and free-carrier concentration were related to the strain relaxation and explained by the creation of misfit dislocations and other extended defects which were visible on the synchrotron X-ray topographs after high pressure - high temperature treatment.

引用

页码：1003 / 1007

页数：5