Simple, reliable Cu/low-k interconnect integration using mechanically-strong low-k dielectric material: Silicon-oxycarbide

被引：13

作者：

Furusawa, T ^{[1
]}

Sakuma, N ^{[1
]}

Ryuzaki, D ^{[1
]}

Kondo, S ^{[1
]}

Takeda, K ^{[1
]}

Machida, S ^{[1
]}

Hinode, K ^{[1
]}

机构：

[1] Hitachi Ltd, Cent Res Lab, Kokubunji, Tokyo 1858601, Japan

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new low-k material (silicon-oxycarbide, k=3.3) is developed to improve the mechanical strength of Cu/low-k interconnects. The film is shown to be over three-times stronger than conventional ones. The film qualities are high enough: the heat resistance is good up to 650 degrees C, and the breakdown voltage is 5.5 MV/cm. The film is applied to interconnection test devices without using an oxide-cap. The k remains as low as 3.3, showing that an equivalent capacitance reduction with conventional materials (k=2.5-2.9) can be achieved using a simpler and more reliable structure.

引用

页码：222 / 224

页数：3