Photoelectron emission characteristics of diamond near the band gap

被引：11

作者：

Cui, JB ^{[1
]}

Ristein, J ^{[1
]}

Ley, L ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Inst Tech Phys, D-91058 Erlangen, Germany

来源：

关键词：

band gap; hydrogenation; photoelectron emission;

D O I：

10.1016/S0925-9635(99)00236-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Total photoelectron yield was used to study the electron emission process of diamond surfaces. The total electron emission intensity as a function of photon energy is measured between 2 and 6.2 eV and for temperatures between 300 and 600 It from hydrogenated and hydrogen-free surfaces. The yield spectra depend on the surface hydrogenation as well as on temperature. As the temperature is increased from 300 to 600 K, the change in emission intensity is mainly observed near the band gap of diamond (from 5.2 to 5.5 eV) on both hydrogenated and hydrogen-free single crystal diamond surfaces but not for the CVD diamond film. The temperature dependence of the spectrum is explained by a combination of bulk and surface emission taking the temperature dependence of the diamond absorption coefficient into account. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：1036 / 1040

页数：5

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