Electrical and optical changes in AlGaAs and InGaP during dielectric etching in ECR SF6 plasmas

被引：9

作者：

Lee, KN ^{[1
]}

Lee, JW ^{[1
]}

Abernathy, CR ^{[1
]}

Pearton, SJ ^{[1
]}

Hobson, WS ^{[1
]}

Ren, F ^{[1
]}

机构：

[1] AT&T BELL LABS,LUCENT TECHNOL,MURRAY HILL,NJ 07974

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 03期

关键词：

D O I：

10.1016/S0038-1101(97)86516-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High ion density plasma conditions are found to create severe reductions in carrier density and reduction in photoluminescence intensity in doped AlGaAs and InGaP during exposure to Electron Cyclotron Resonance SF6 discharges. These are typical of processes where SiNx or SiO2 are removed from an underlying semiconductor layer, and suggest that conventional reactive ion etching, or alternatively low power or high pressure ECR conditions are necessary to avoid ion-induced damage. (C) 1997 Elsevier Science Ltd.

引用

页码：401 / 404

页数：4

共 18 条

[1] GROWTH OF III-V MATERIALS BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].