Influence of the nitrogen content on the field emission properties of a-CNx films prepared by pulsed laser deposition

被引：9

作者：

Fogarassy, E

Szorenyi, T

Antoni, F

Stoquert, JP

Pirio, G

Olivier, J

Legagneux, P

Boher, P

Pons-Y-Moll, O

机构：

[1] CNRS PHASE, F-67037 Strasbourg 02, France

[2] Res Grp Laser Phys, H-6701 Szeged, Hungary

[3] THALES R&T, F-91404 Orsay, France

[4] SOPRA SA, F-92270 Bois Colombes, France

[5] Univ Paris 07, GPS, F-75251 Paris 05, France

来源：

APPLIED SURFACE SCIENCE | 2002年 / 197卷

关键词：

pulsed laser deposition; carbon; nitrogen; surface roughness; field emission;

D O I：

10.1016/S0169-4332(02)00389-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Amorphous carbon nitride (a-CNx) films were grown on silicon substrates by ArF excimer laser ablation of a graphite target in the presence of nitrogen at various gas pressures. By working at elevated pressures (up to 100 Pa), high amounts of nitrogen can be incorporated into the films (N/C less than or equal to 0.4) which lead to strong enhancement of their field emission properties. This behaviour was demonstrated to be mainly related to changes in the surface roughness of the samples, in connection with the development of graphite-like structures. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：316 / 320

页数：5

共 24 条

[1] Spectroscopic studies during pulsed laser ablation deposition of C-N films [J].