Improving organic transistor performance through contact-area-limited doping

被引：35

作者：

Li, Jun ^{[1
,2
]}

Zhang, Xiao-Wen ^{[1
,2
]}

Zhang, Liang ^{[2
]}

Khizar-ul-Haq ^{[2
]}

Jiang, Xue-Yin ^{[2
]}

Zhu, Wen-Qing ^{[1
,2
]}

Zhang, Zhi-Lin ^{[1
,2
]}

机构：

[1] Shanghai Univ, Dept Mat Sci, Shanghai 201800, Peoples R China

[2] Shanghai Univ, Minist Educ, Key Lab Adv Display & Syst Applicat, Shanghai 200072, Peoples R China

来源：

SOLID STATE COMMUNICATIONS | 2009年 / 149卷 / 41-42期

关键词：

Organic crystal; Thin film; Impurities in semiconductors; THIN-FILM TRANSISTORS; LIGHT-EMITTING-DIODES; POLYMER; PENTACENE; INJECTION; METAL;

D O I：

10.1016/j.ssc.2009.07.006

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Organic thin film transistors (OTFTs) with different concentrations of tetrafluorotetracyanoquinodimethane (F(4)-TCNQ) doped pentacene interlayer were fabricated. When a 2 wt% F4-TCNQ doped pentacene layer was incorporated between gold electrodes and a pentacene layer, the performance of the OTFT was significantly improved. The saturation mobility increased from 0.21 to 0.63 cm(2)/Vs, the threshold voltage was reduced from -31.9 to -7.6 V, and the threshold swing varied from 5.09 to 2.40 V/dec as compared with an OTFT without interlayer. This improvement was ascribed to the reduction of the hole-injection barrier and contact resistance. Our results indicated that contact-area-limited doping is an effective way to improve OTFT performance. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：1826 / 1830

页数：5

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