Atomic layer deposition of ZnSe/CdSe superlattice nanowires

被引：134

作者：

Solanki, R ^{[1
]}

Huo, J

Freeouf, JL

Miner, B

机构：

[1] Oregon Grad Inst, Sch Sci & Engn, Dept Elect & Comp Engn, Beaverton, OR 97006 USA

[2] Intel Corp, Hillsboro, OR 97124 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 20期

关键词：

D O I：

10.1063/1.1521570

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Atomic layer deposition has been employed to grow nanowires composed of ZnSe/CdSe superlattices. Growth of the nanowires was initiated using gold nanoparticles and the vapor-liquid-solid mechanism. High-resolution transmission electron microscopy shows that these structures are single crystals and the phase of alternating layers of ZnSe and CdSe is zinc blende. The (111) planes of ZnSe and CdSe are oriented at 60degrees. (C) 2002 American Institute of Physics.

引用

页码：3864 / 3866

页数：3

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