Nanometer scale electronic reconstruction at the interface between LaVO3 and LaVO4

被引：55

作者：

Kourkoutis, L. Fitting ^{[1
]}

Hotta, Y.

Susaki, T.

Hwang, H. Y.

Muller, D. A.

机构：

[1] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[2] Univ Tokyo, Dept Adv Mat Sci, Kashiwa, Chiba 2778561, Japan

[3] Japan Sci & Technol Agcy, Kawaguchi 3320012, Japan

来源：

PHYSICAL REVIEW LETTERS | 2006年 / 97卷 / 25期

关键词：

D O I：

10.1103/PhysRevLett.97.256803

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electrons at interfaces, driven to minimize their free energy, are distributed differently than in bulk. This can be dramatic at interfaces involving heterovalent compounds. Here we profile an abrupt interface between V 3d(2) LaVO3 and V 3d(0) LaVO4 using electron energy loss spectroscopy. Although no bulk phase of LaVOx with a V 3d(1) configuration exists, we find a nanometer-wide region of V 3d(1) at the LaVO3/LaVO4 interface, rather than a mixture of V 3d(0) and V 3d(2). The two-dimensional sheet of 3d(1) electrons is a prototypical electronic reconstruction at an interface between competing ground states.

引用

页数：4

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