Plane-parallel ionization chamber response in the buildup region of obliquely incident photon beams

被引:20
作者
Gerbi, BJ
Khan, FM
机构
[1] Dept. Therapeut. Radiol.-Radiat. O., University of Minnesota, Box 494, Minneapolis, MN 55455
关键词
D O I
10.1118/1.598000
中图分类号
R8 [特种医学]; R445 [影像诊断学];
学科分类号
1002 ; 100207 ; 1009 ;
摘要
Fixed-separation plane-parallel ionization chambers have been shown to overestimate the dose in the buildup region of normally incident high-energy photon beams. This work shows that these ionization chambers exhibit an even greater over-response in the buildup region of obliquely incident photon beams. This over-response at oblique incidence is greatest at the surface of the phantom and increases with increasing angle of beam incidence. In addition, the magnitude of the over-response depends on held size, beam energy, and chamber construction. This study shows that plane-parallel ionization chambers can over-respond by more than a factor of 2.3 at the phantom surface for obliquely incident high-energy photon fields. (C) 1997 American Association of Physicists in Medicine.
引用
收藏
页码:873 / 878
页数:6
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