Ambipolar field-effect transistor behavior of Gd@C82 metallofullerene peapods

被引：124

作者：

Shimada, T ^{[1
]}

Okazaki, T

Taniguchi, R

Sugai, T

Shinohara, H

Suenaga, K

Ohno, Y

Mizuno, S

Kishimoto, S

Mizutani, T

机构：

[1] Nagoya Univ, Dept Chem, Nagoya, Aichi 4648602, Japan

[2] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058565, Japan

[3] Nagoya Univ, Dept Quantum Engn, Nagoya, Aichi 4648603, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 21期

关键词：

D O I：

10.1063/1.1522482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transport properties of C-60 fullerene peapods and Gd@C-82 metallofullerene peapods are investigated by using the field effect in a gated structure. The results show that C-60 peapods exhibit unipolar p-type characteristics, whereas Gd@C-82 peapods show ambipolar both p- and n-type characteristics. This difference in transport behavior can be explained in terms of a bandgap narrowing of the peapods. One of the important findings is that tunable electronic properties of peapods are achieved by using the different types of encapsulated fullerene molecules. (C) 2002 American Institute of Physics.

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页码：4067 / 4069

页数：3

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