Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation

被引:16
作者
De Salvador, D.
Bisognin, G.
Di Marino, M.
Napolitani, E.
Carnera, A.
Graoui, H.
Foad, M. A.
Boscherini, F.
Mirabella, S.
机构
[1] Univ Padua, MATIS INFM CNR, I-35131 Padua, Italy
[2] Univ Padua, Dept Phys, I-35131 Padua, Italy
[3] Appl Mat Inc, Sunnyvale, CA 94086 USA
[4] Univ Bologna, CNISM, I-40127 Bologna, Italy
[5] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
[6] Univ Catania, MATIS INFM CNR, I-95123 Catania, Italy
[7] Univ Catania, Dept Phys & Astron, I-95123 Catania, Italy
关键词
D O I
10.1063/1.2402905
中图分类号
O59 [应用物理学];
学科分类号
摘要
The authors have investigated ultrashallow p(+)/n-junction formation by solid-phase epitaxy, by using x-ray absorption near-edge spectroscopy measurements on the B K edge. A clear fingerprint of B-B clusters is detected in the spectra. The authors demonstrate that B clustering occurs during the very early stages of annealing-induced Si recrystallization, i.e., when B is still in an amorphous matrix. After complete regrowth the local structure around B remains the same as in the amorphous phase, implying that B clusters are transferred to the crystalline structure. (c) 2006 American Institute of Physics.
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页数:3
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