Weak antilocalization in epitaxial graphene: Evidence for chiral electrons

被引：316

作者：

Wu, Xiaosong ^{[1
]}

Li, Xuebin

Song, Zhimin

Berger, Claire

de Heer, Walt A.

机构：

[1] Georgia Inst Technol, Sch Phys, Atlanta, GA 30332 USA

[2] Inst Neel, CNRS, LEPES, F-38042 Grenoble 6, France

来源：

PHYSICAL REVIEW LETTERS | 2007年 / 98卷 / 13期

关键词：

D O I：

10.1103/PhysRevLett.98.136801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Transport in ultrathin graphite grown on silicon carbide is dominated by the electron-doped epitaxial layer at the interface. Weak antilocalization in 2D samples manifests itself as a broad cusplike depression in the longitudinal resistance for magnetic fields 10 mT < B < 5 T. An extremely sharp weak-localization resistance peak at B=0 is also observed. These features quantitatively agree with graphene weak-(anti)localization theory implying the chiral electronic character of the samples. Scattering contributions from the trapped charges in the substrate and from trigonal warping due to the graphite layer on top are tentatively identified. The Shubnikov-de Haas oscillations are remarkably small and show an anomalous Berry's phase.

引用

页数：4

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