Organometal halide perovskite solar cells: degradation and stability

被引:1517
作者
Berhe, Taame Abraha [1 ]
Su, Wei-Nien [1 ]
Chen, Ching-Hsiang [1 ]
Pan, Chun-Jern [2 ]
Cheng, Ju-Hsiang [2 ]
Chen, Hung-Ming [2 ]
Tsai, Meng-Che [2 ]
Chen, Liang-Yih [2 ]
Dubale, Amare Aregahegn [2 ]
Hwang, Bing-Joe [2 ,3 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Grad Inst Appl Sci & Technol, NanoElectrochem Lab, Taipei 106, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Dept Chem Engn, NanoElectrochem Lab, Taipei 106, Taiwan
[3] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
关键词
HOLE-CONDUCTOR-FREE; METHYLAMMONIUM LEAD IODIDE; OPEN-CIRCUIT VOLTAGE; ORGANIC-INORGANIC PEROVSKITE; LONG-TERM STABILITY; T PHASE-RELATIONS; CH3NH3PBI3; PEROVSKITE; THIN-FILM; HIGH-PERFORMANCE; SPIRO-MEOTAD;
D O I
10.1039/c5ee02733k
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Organometal halide perovskite solar cells have evolved in an exponential manner in the two key areas of efficiency and stability. The power conversion efficiency (PCE) reached 20.1% late last year. The key disquiet was stability, which has been limiting practical application, but now the state of the art is promising, being measured in thousands of hours. These improvements have been achieved through the application of different materials, interfaces and device architecture optimizations, especially after the investigation of hole conductor free mesoporous devices incorporating carbon electrodes, which promise stable, low cost and easy device fabrication methods. However, this work is still far from complete. There are various issues associated with the degradation of Omh-perovskite, and the interface and device instability which must be addressed to achieve good reproducibility and long lifetimes for Omh-PSCs with high conversion efficiencies. A comprehensive understanding of these issues is required to achieve breakthroughs in stability and practical outdoor applications of Omh-PSCs. For successful small and large scale applications, besides the improvement of the PCE, the stability of Omh-PSCs has to be improved. The causes of failure and associated mechanisms of device degradation, followed by the origins of degradation, approaches to improve stability, and methods and protocols are discussed in detail and form the main focus of this review article.
引用
收藏
页码:323 / 356
页数:34
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