Optical quenching of photoconductivity in GaN photoconductors

被引：33

作者：

Huang, ZC

Mott, DB

Shu, PK

Zhang, R

Chen, JC

Wickenden, DK

机构：

[1] UNIV MARYLAND BALTIMORE CTY,DEPT COMP SCI & ELECT ENGN,BALTIMORE,MD 21228

[2] NASA,GODDARD SPACE FLIGHT CTR,SOLID STATE DEVICE DEV BRANCH,GREENBELT,MD 20771

[3] JOHNS HOPKINS UNIV,APPL PHYS LAB,LAUREL,MD 20723

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 05期

关键词：

D O I：

10.1063/1.366090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The observation of optical quenching of photoconductivity in GaN photoconductors temperature is reported on. Three prominent quenching bands were found at E-v + 1.44, 1.58, and 2.20 eV, respectively. These levels are related to three hole traps in GaN materials based on a hole trap model to interpret the quenching mechanism. The responsivity was reduced about 12% with an additional He-Ne laser shining on the photoconductor. (C) 1997 American Institute of Physics.

引用

页码：2707 / 2709

页数：3

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