Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures

被引：50

作者：

Baranov, AN

Bertru, N

Cuminal, Y

Boissier, G

Alibert, C

Joullie, A

机构：

[1] Ctr. Electron. M., UMR CNRS 5507, Université de Montpellier II

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 06期

关键词：

D O I：

10.1063/1.119629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Multiple quantum well InAs/GaSb laser heterostructures with type III (type II broken gap) band alignment in the active region have been grown by molecular beam epitaxy. Intense electroluminescence was observed at room temperature (RT) with peak emission wavelengths in the range 1.95-3.4 mu m. RT lasing has been achieved at 1.98 and 2.32 mu m for the structures with 6 and 12 Angstrom thick InAs quantum wells, respectively. (C) 1997 American Institute of Physics.

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页码：735 / 737

页数：3

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