Electrical properties of thin yttria-stabilized zirconia overlayers produced by atomic layer deposition for solid oxide fuel cell applications

被引:42
作者
Brahim, C.
Ringuede, A.
Cassir, M.
Putkonen, M.
Niinisto, L.
机构
[1] ENSCP, CNRS UMR 7575, Lab Electrochim & Chim Analyt, F-75231 Paris 05, France
[2] Aalto Univ, Lab Inorgan & Analyt Chem, FIN-02015 Espoo, Finland
关键词
ALD; yttria-stabilized zirconia; SOFC; electrical properties;
D O I
10.1016/j.apsusc.2006.08.043
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Thin films of yttria-stabilized zirconia (YSZ) electrolyte were prepared by atomic layer deposition at 300 degrees C for solid oxide fuel cell (SOFC) applications. YSZ samples of 300-1000 nm thickness were deposited onto La0.8Sr0.2MnO3 (LSM) cathodes. A microstructural study was performed on these samples and their electrical properties were characterised between 100 and 390 degrees C by impedance spectroscopy. A remarkable feature is that the as-deposited layers were already crystalline without any annealing treatment. Their resistance decreased when reducing the layer thickness; nevertheless, their Conductivity and activation energy were significantly lower than those reported in the literature for bulk YSZ. (c) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:3962 / 3968
页数:7
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