A novel in situ vacuum encapsulated lateral field emitter triode

被引：24

作者：

Park, CM

Lim, MS

Han, MK

机构：

[1] School of Electrical Engineering, Seoul National University

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 11期

关键词：

D O I：

10.1109/55.641438

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have designed and fabricated a novel lateral field emitter triode, which is in situ vacuum encapsulated so that any troublesome additional vacuum sealing process is not required, The device exhibits low turn-on voltage of 7 V, stable current density of 2 mu A per tip, and high transconductance of 1.7 mu S per 100 tips field emitter array at V-AC = 22 V, An in situ vacuum encapsulation employing recessed cavities by isotropic RIE (reactive ion etch) method and an electron beam evaporated molybdenum vacuum seal are implemented to fabricate the new field emitter triode, The superb field emitter characteristics are probably due to sub-micron dimension device structure and the pencil type lateral cathode tip employing upper and lower LOCOS oxidation.

引用

页码：538 / 540

页数：3

共 8 条

[1]

Busta H. H., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P533, DOI 10.1109/IEDM.1989.74338

[2] DESIGN OF HIGH-VACUUM TEST STATION FOR RAPID EVALUATION OF VACUUM MICROELECTRONIC DEVICES [J].

BUSTA, HH ;

POGEMILLER, JE ;

ZIMMERMAN, BJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2350-2354

[3]

Lee CG, 1996, IEEE ELECTR DEVICE L, V17, P115, DOI 10.1109/55.485185

[4] PLANAR-PROCESSED TUNGSTEN AND POLYSILICON VACUUM MICROELECTRONIC DEVICES WITH INTEGRAL CAVITY SEALING [J].

MEI, Q ;

TAMAGAWA, T ;

YE, C ;

LIN, Y ;

ZURN, S ;

POLLA, DL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1993, 11 (02) :493-496

[5]

PARK CM, 1996, IEDM, P533

[6]

Spindt CA, 1995, INTERNATIONAL ELECTRON DEVICES MEETING, 1995 - IEDM TECHNICAL DIGEST, P389, DOI 10.1109/IEDM.1995.499221

[7]

SPINDT CA, 1991, IEEE T ELECTRON DEV, V38, P355

[8] DYNAMIC BEHAVIOR AND INSTABILITY OF FIELD EMITTER SURFACES [J].

TSONG, TT .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (10) :2317-2319

← 1 →