Resonant tunneling through a macroscopic charge state in a superconducting single electron transistor

被引:20
作者
Averin, DV
Korotkov, AN
Manninen, AJ
Pekola, JP
机构
[1] MOSCOW MV LOMONOSOV STATE UNIV, INST NUCL PHYS, MOSCOW 119899, RUSSIA
[2] UNIV JYVASKYLA, DEPT PHYS, SF-40351 JYVASKYLA, FINLAND
关键词
D O I
10.1103/PhysRevLett.78.4821
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We predict theoretically and observe in experiment that the differential conductance of a super conducting single electron transistor exhibits a peak which is a complete analog, in a macroscopic system, of a standard resonant tunneling peak associated with tunneling through a single quantum state. In particular, in a symmetric transistor, the peak height is universal and equal to e(2)/2 pi (h) over bar. Away from the resonance we clearly observe the cotunneling current which, in contrast to the normal-metal transistor, varies linearly with the bias voltage.
引用
收藏
页码:4821 / 4824
页数:4
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