Low resistance ohmic contacts to p-Ge1-xCx on Si

被引：5

作者：

Shao, XP ^{[1
]}

Rommel, SL ^{[1
]}

Omer, BA ^{[1
]}

Berger, PR ^{[1
]}

Kolodzey, J ^{[1
]}

Unruh, KM ^{[1
]}

机构：

[1] UNIV DELAWARE,DEPT PHYS,NEWARK,DE 19716

来源：

IEEE ELECTRON DEVICE LETTERS | 1997年 / 18卷 / 01期

关键词：

D O I：

10.1109/55.553059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on ohmic contact measurements of Al, Au, and W metallizations to p-type epitaxial Ge0.9983C0.0017 grown on a (100) Si substrate by molecular beam epitaxy (MBE). Contacts were annealed at various temperatures, and values of specific contact resistance have been achieved which range from 10(-5) Ohm . cm(2) to as low as 5.6 x 10(-6) Ohm . cm(2). Theoretical calculations of the contact resistance of metals on Ge1-xCx with small percentages of carbon, based on the thermionic held emission mechanism of conduction, result in good agreement with the experimental data, We conclude that Al and Au are suitable ohmic contacts to p-Ge0.9983C0.0017 alloys.

引用

页码：7 / 9

页数：3

共 18 条

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