Electrical properties of nominally undoped silicon nanowires grown by molecular-beam epitaxy

被引：51

作者：

Bauer, Jan ^{[1
]}

Fleischer, Frank ^{[1
]}

Breitenstein, Otwin ^{[1
]}

Schubert, Luise ^{[1
]}

Werner, Peter ^{[1
]}

Goesele, Ulrich ^{[1
]}

Zacharias, Margit ^{[1
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 01期

关键词：

D O I：

10.1063/1.2428402

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Single undoped Si nanowires were electrically characterized. The nanowires were grown by molecular-beam epitaxy on n(+) silicon substrates and were contacted by platinum/iridium tips. I-V curves were measured and electron beam induced current investigations were performed on single nanowires. It was found that the nanowires have an apparent resistivity of 0.85 Omega cm, which is much smaller than expected for undoped Si nanowires. The conductance is explained by hopping conductivity at the Si-SiO2 interface of the nanowire surface.

引用

页数：3

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