Structural changes in single crystals NbSe2 after high-temperature treatment

被引:1
作者
Braude, I. S. [1 ]
Mamalui, A. A. [2 ]
Onishko, O. N. [2 ]
机构
[1] Natl Acad Sci Ukraine, BI Verkin Inst Low Temp Phys & Engn, UA-61103 Kharkov, Ukraine
[2] Natl Tech Univ, Kharkov Polytech Inst, UA-61002 Kharkov, Ukraine
关键词
Quasi-low-dimensional system; High-temperature treatment; Vacancy formation; Phase transitions; Diffuse X-ray scattering;
D O I
10.1016/j.jallcom.2009.07.083
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The influence of high-temperature annealing (443 K < T < 463 K) upon fine structure of single crystals NbSe2 has been investigated. It is found from diffuse X-ray scattering (DXS) measurement that vacancy-type point defects of various sizes appear in the specimens after thermal treatment. The defects cause anisotropic displacement of the atoms in the lattice and change the crystal polytype from 2H-NbSe2 to 4H-NbSe2-x. conceivably via the 3R-NbSe2-x phase. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:859 / 863
页数:5
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