Photoemission (XPS and XPD) study of epitaxial LaAlO3 fiim grown on SrTiO3(001)

被引:20
作者
El Kazzi, M.
Merckling, C.
Delhaye, G.
Arzel, L.
Grenet, G.
Bergignat, E.
Hollinger, G.
机构
[1] Ecole Cent Lyon, LEOM, F-69134 Ecully, France
[2] ST Microelect, F-38926 Crolles, France
关键词
XPS; XPD; MBE; high-k dielectrics; LaAlO3; SURFACE;
D O I
10.1016/j.mssp.2006.10.044
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This study investigates the tensile-strained growth of LaAlO3 on SrTiO3(0 0 1) substrate by molecular beam epitaxy (MBE). Growth was controlled in situ by reflection high energy electron diffraction (RHEED). The characterization was carried out ex situ by photoemission and atomic force microscopy (AFM). Photoelectron spectroscopy (XPS) reveals the development of a TiOx-rich interface. Photoelectron diffraction (XPD) confirms that a 1.2-nm-thick pseudomorphic LaAlO3 film has been grown on SrTiO3(0 0 1) substrate with a perpendicular lattice parameter of 0.372 +/- 0.02 urn. (c) 2006 Elsevier Ltd. All rights reserved.
引用
收藏
页码:954 / 958
页数:5
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