High electron mobility AlGaN/GaN heterostructure on (111) Si

被引：70

作者：

Schremer, AT ^{[1
]}

Smart, JA ^{[1
]}

Wang, Y ^{[1
]}

Ambacher, O ^{[1
]}

MacDonald, NC ^{[1
]}

Shealy, JR ^{[1
]}

机构：

[1] Cornell Univ, Sch Elect Engn, Ithaca, NY 14850 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 76卷 / 06期

关键词：

D O I：

10.1063/1.125878

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature Hall mobilities exceeding 900 cm(2)/V s are obtained for AlGaN/GaN heterostructures on (111) Si by single-temperature flow modulation organometallic vapor phase epitaxy. Thin pseudomorphic AlGaN top layers exhibit a 1.5 nm surface roughness and induces a two-dimensional electron gas sheet carrier concentration of 1.0x10(13) cm(-2). The GaN buffer layer has a background carrier concentration of 1.0x10(15) cm(-3), 130 arcsec x-ray diffraction full width at half maximum, and a low-temperature photoluminescence linewidth of 10 meV. An AlN nucleation layer provides static electrical isolation between the AlGaN/GaN and the conducting Si substrate. Large crack-free areas of high-crystalline-quality epitaxial material are obtained and have been successfully used for transistor fabrication. (C) 2000 American Institute of Physics. [S0003-6951(00)03406-9].

引用

页码：736 / 738

页数：3

共 16 条

[1] Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures [J].